Carrier transport and predominant scattering mode in pyrolytic indium oxide thin film
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Auteurs : RBID : ISTEX:10853_1990_Article_BF00585464.pdfAbstract
Electrical transport properties have been studied of polycrystalline thin films of In2O3 and In2O3∶Sn prepared by a chemical spray technique on a glass substrate. Dominant carrier scattering processes have been discussed critically by studying the Hall mobility and Seebeck coefficient. It has been observed that the Hall mobility in these films is mostly limited either by the optical mode of lattice scattering or by the acoustic mode of scattering, and there is a critical level of the carrier concentration at which one is masked by the other. The position and nature of the Fermi levels were also determined for these degenerate semiconductor samples.
DOI: 10.1007/BF00585464
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Carrier transport and predominant scattering mode in pyrolytic indium oxide thin film</title><author><name>M. Obaidul Hakim</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics, University of Rajshahi, Rajshahi, Bangladesh</mods:affiliation><country xml:lang="fr">Bangladesh</country><wicri:regionArea>Department of Physics, University of Rajshahi, Rajshahi</wicri:regionArea><wicri:noRegion>Rajshahi</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1990_Article_BF00585464.pdf</idno><date when="1990">1990</date><idno type="doi">10.1007/BF00585464</idno><idno type="wicri:Area/Main/Corpus">000023</idno><idno type="wicri:Area/Main/Curation">000023</idno><idno type="wicri:Area/Main/Exploration">000455</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Electrical transport properties have been studied of polycrystalline thin films of In2O3 and In2O3∶Sn prepared by a chemical spray technique on a glass substrate. Dominant carrier scattering processes have been discussed critically by studying the Hall mobility and Seebeck coefficient. It has been observed that the Hall mobility in these films is mostly limited either by the optical mode of lattice scattering or by the acoustic mode of scattering, and there is a critical level of the carrier concentration at which one is masked by the other. The position and nature of the Fermi levels were also determined for these degenerate semiconductor samples.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="04172de7a83efd3960afc718e18b287164b2e63a"><titleInfo lang="eng"><title>Carrier transport and predominant scattering mode in pyrolytic indium oxide thin film</title></titleInfo><name type="personal"><namePart type="given">M. Obaidul</namePart><namePart type="family">Hakim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, University of Rajshahi, Rajshahi, Bangladesh</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1989-01-11</dateCreated><dateCaptured encoding="w3cdtf">1989-07-17</dateCaptured><dateValid encoding="w3cdtf">2004-10-14</dateValid><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Electrical transport properties have been studied of polycrystalline thin films of In2O3 and In2O3∶Sn prepared by a chemical spray technique on a glass substrate. Dominant carrier scattering processes have been discussed critically by studying the Hall mobility and Seebeck coefficient. It has been observed that the Hall mobility in these films is mostly limited either by the optical mode of lattice scattering or by the acoustic mode of scattering, and there is a critical level of the carrier concentration at which one is masked by the other. The position and nature of the Fermi levels were also determined for these degenerate semiconductor samples.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1990</partNumber><partNumber>Volume: 25</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1990-02-01</dateIssued><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Characterization and Evaluation Materials</topic><topic>Mechanics</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 56</identifier><recordInfo><recordOrigin>Chapman and Hall Ltd, 1990</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00585464</identifier><identifier type="matrixNumber">Art45</identifier><identifier type="local">BF00585464</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1455</start><end>1458</end></extent></part><recordInfo><recordOrigin>Chapman and Hall Ltd, 1990</recordOrigin><recordIdentifier>10853_1990_Article_BF00585464.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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